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| Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.00.2 3.00.2 0.70.1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (Ta=25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 25 20 12 1 0.5 300 150 -55 ~ +150 Unit V V V A A mW C C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 Conditions VCB = 25V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 500mA, IB = 20mA*2 IC = 500mA, IB = 20mA*2 200 10 0.6 *2 min typ max 100 2.00.2 (Ta=25C) marking +0.2 0.45-0.1 s Absolute Maximum Ratings 15.60.5 Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). Unit nA V V V 25 20 12 200 60 0.13 0.4 1.2 800 V V MHz pF VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz Pulse measurement *1h FE1 Rank classification R 200 ~ 350 S 300 ~ 500 T 400 ~ 800 *3R on Measurement circuit 1k Rank hFE1 IB=1mA f=1kHz V=0.3V VB VV VA Ron= VB !1000() VA-VB 1 Transistor PC -- Ta 500 2.4 Ta=25C 2.0 2SD1450 IC -- VCE 100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 Collector power dissipation PC (mW) 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Collector current IC (A) 400 1.6 IB=4.0mA 3.5mA 1.2 3.0mA 2.5mA 2.0mA 0.8 1.5mA 1.0mA 0.4 0.5mA 300 25C 200 100 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C IC/IB=25 1200 hFE -- IC 400 VCE=2V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1000 Transition frequency fT (MHz) 0.3 1 3 10 350 300 250 200 150 100 50 800 Ta=75C 600 25C -25C 400 200 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 20 120 IE=0 f=1MHz Ta=25C NV -- IC VCE=10V GV=80dB Function=FLAT Collector output capacitance Cob (pF) Noise voltage NV (mV) 16 100 80 Rg=100k 60 22k 40 5k 12 8 4 20 0 1 3 10 30 100 0 0.01 0.03 0.1 0.3 1 Collector to base voltage VCB (V) Collector current IC (mA) 2 |
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